JPH0216017B2 - - Google Patents

Info

Publication number
JPH0216017B2
JPH0216017B2 JP55104514A JP10451480A JPH0216017B2 JP H0216017 B2 JPH0216017 B2 JP H0216017B2 JP 55104514 A JP55104514 A JP 55104514A JP 10451480 A JP10451480 A JP 10451480A JP H0216017 B2 JPH0216017 B2 JP H0216017B2
Authority
JP
Japan
Prior art keywords
region
epitaxial layer
type
buried
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55104514A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5730359A (en
Inventor
Mamoru Fuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP10451480A priority Critical patent/JPS5730359A/ja
Priority to US06/288,450 priority patent/US4476480A/en
Publication of JPS5730359A publication Critical patent/JPS5730359A/ja
Publication of JPH0216017B2 publication Critical patent/JPH0216017B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP10451480A 1980-07-30 1980-07-30 Semiconductor device Granted JPS5730359A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10451480A JPS5730359A (en) 1980-07-30 1980-07-30 Semiconductor device
US06/288,450 US4476480A (en) 1980-07-30 1981-07-30 High withstand voltage structure of a semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10451480A JPS5730359A (en) 1980-07-30 1980-07-30 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5730359A JPS5730359A (en) 1982-02-18
JPH0216017B2 true JPH0216017B2 (en]) 1990-04-13

Family

ID=14382595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10451480A Granted JPS5730359A (en) 1980-07-30 1980-07-30 Semiconductor device

Country Status (2)

Country Link
US (1) US4476480A (en])
JP (1) JPS5730359A (en])

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5374840A (en) * 1989-04-25 1994-12-20 Matsushita Electronics Corporation Semiconductor device with isolated transistors
JPS5994861A (ja) * 1982-11-24 1984-05-31 Hitachi Ltd 半導体集積回路装置及びその製造方法
EP0144865B1 (en) * 1983-12-05 1991-06-26 General Electric Company Semiconductor wafer with an electrically-isolated semiconductor device
JPH0638478B2 (ja) * 1984-10-22 1994-05-18 株式会社日立製作所 半導体装置
IT1221019B (it) * 1985-04-01 1990-06-21 Ates Componenti Elettron Dispositivo elettronico integrato per il comando di carichi induttivi,con elemento di ricircolo
JPS62265761A (ja) * 1986-05-13 1987-11-18 Nec Corp 半導体集積回路
IT1197279B (it) * 1986-09-25 1988-11-30 Sgs Microelettronica Spa Dispositivo integrato per schermare l'iniezione di cariche nel substrato, in particolare in circuiti di pilotaggio di carichi induttivi e/o capacitivi
IT1220185B (it) * 1987-10-21 1990-06-06 Sgs Microelettronica Spa Sistema antisaturazione per transistore pnp verticale a collettore isolato e struttura integrata di quest'ultimo
EP0314399A3 (en) * 1987-10-30 1989-08-30 Precision Monolithics Inc. Buried zener diode and method of forming the same
IT1215792B (it) * 1988-02-04 1990-02-22 Sgs Thomson Microelectronics Transistore di tipo pnp verticale a collettore isolato con dispositivo per eliminare l'effetto di componenti parassiti di giunzione.
JP5169197B2 (ja) 2007-12-17 2013-03-27 株式会社Ｉｈｉ 予混合圧縮着火ディーゼルエンジン
US9520486B2 (en) * 2009-11-04 2016-12-13 Analog Devices, Inc. Electrostatic protection device
US10199482B2 (en) 2010-11-29 2019-02-05 Analog Devices, Inc. Apparatus for electrostatic discharge protection
US10181719B2 (en) 2015-03-16 2019-01-15 Analog Devices Global Overvoltage blocking protection device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL145396B (nl) * 1966-10-21 1975-03-17 Philips Nv Werkwijze ter vervaardiging van een geintegreerde halfgeleiderinrichting en geintegreerde halfgeleiderinrichting, vervaardigd volgens de werkwijze.
US3648128A (en) * 1968-05-25 1972-03-07 Sony Corp An integrated complementary transistor circuit chip with polycrystalline contact to buried collector regions
US4038680A (en) * 1972-12-29 1977-07-26 Sony Corporation Semiconductor integrated circuit device
JPS51120183A (en) * 1975-04-14 1976-10-21 Toshiba Corp Semiconductor devicc
US4087900A (en) * 1976-10-18 1978-05-09 Bell Telephone Laboratories, Incorporated Fabrication of semiconductor integrated circuit structure including injection logic configuration compatible with complementary bipolar transistors utilizing simultaneous formation of device regions

Also Published As

Publication number Publication date
JPS5730359A (en) 1982-02-18
US4476480A (en) 1984-10-09

Similar Documents

Publication Publication Date Title
US5066602A (en) Method of making semiconductor ic including polar transistors
US4047217A (en) High-gain, high-voltage transistor for linear integrated circuits
JPH0347593B2 (en])
JPH0216017B2 (en])
US4323913A (en) Integrated semiconductor circuit arrangement
US4110782A (en) Monolithic integrated circuit transistor having very low collector resistance
US4046605A (en) Method of electrically isolating individual semiconductor circuits in a wafer
JP2700180B2 (ja) ｐｎｐ型の縦型孤立コレクタトランジスタ
US4443808A (en) Semiconductor device
US3510736A (en) Integrated circuit planar transistor
JPS6323335A (ja) 半導体装置及びその製造方法
JPH0311107B2 (en])
JPS6133261B2 (en])
JPS6239547B2 (en])
JP2518929B2 (ja) バイポ―ラ型半導体集積回路
JPS6155775B2 (en])
JPH0671008B2 (ja) ダイオード
JPH0582534A (ja) 半導体装置
JPS6031105B2 (ja) 半導体装置
JP3149913B2 (ja) トランジスタの製造方法
JPS644349B2 (en])
JPH0629374A (ja) 半導体集積回路装置
GB1354527A (en) Semiconductor devices
JPH09283534A (ja) 半導体装置の製造方法
JPH04262569A (ja) 半導体装置